issue 1 - september 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTN08400BFF 400v, sot23f, npn medium pow er high voltage transistor summary bv cex > 450v bv ceo > 400v bv eco > 6v i c(cont) = 0.5a v ce(sat) < 175mv @ 500ma p d = 1.5w complementary part number zxtp08400bff description this npn transistor has been desi gned for applicati ons requiring high voltage blocking. the sot23f package is pin compatible with the industry standard sot23 foot print but offers lower profile and higher dissipation for applications where power density is of utmost importance. features ? high voltage low saturation voltage low profile small outline package applications modems telecoms line switching ordering information device marking 1d5 device reel size (inches) tape width (mm) quantity per reel ZXTN08400BFFta 7 8 3000 c e b c e b pinout - top view
ZXTN08400BFF issue 1 - september 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 450 v collector-emitter voltage (forward blocking) v cex 450 v collector-emitter voltage v ceo 400 v emitter-collector voltage (reverse blocking) v eco 6v emitter-base voltage v ebo 7v continuous collector current (c) i c 0.5 a peak pulse current i cm 1a base current i b 0.2 a power dissipation at t amb =25c (a) p d 0.84 w linear derating factor 6.72 mw/c power dissipation at t amb =25c (b) p d 1.34 w linear derating factor 10.72 mw/c power dissipation at t amb =25c (c) p d 1.5 w linear derating factor 12.0 mw/c power dissipation at t amb =25c (d) p d 2.0 w linear derating factor 16.0 mw/c operating and storage temperature range t j , t stg - 55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 149 c/w junction to ambient (b) r ja 93 c/w junction to ambient (c) r ja 83 c/w junction to ambient (d) r ja 60 c/w
ZXTN08400BFF issue 1 - september 2006 3 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTN08400BFF issue 1 - september 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 450 550 v i c = 100 a collector-emitter breakdown voltage (forward blocking) bv cex 450 550 v i c = 100 a, r be < 1k or -1v < v be < 0.25v collector-emitter breakdown voltage (base open) bv ceo 400 500 v i c = 10ma (*) emitter-collector breakdown voltage (reverse blocking) bv ecx 68.0 vi e = 100 a, r bc < 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 68.5 vi e = 100 a, emitter-base breakdown voltage bv ebo 78.1 vi e = 100 a collector-base cut-off current i cbo <1 50 20 na a v cb = 360v v cb = 360v, t amb = 100c collector-emitter cut-off current i cex <1 100 na v ce = 360v, r be < 1k or -1v < v be < 0.25v emitter-base cut-off current i ebo <1 50 na v eb = 5.6v collector-emitter saturation voltage v ce(sat) 70 85 mv i c = 20ma, i b = 1ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. 50 70 mv i c = 50ma, i b = 5ma (*) 120 170 mv i c = 300ma, i b = 30ma (*) 125 175 mv i c = 500ma, i b = 100ma (*) base-emitter saturation voltage v be(sat) 865 950 mv i c = 500ma, i b = 100ma (*) base-emitter turn-on voltage v be(on) 800 900 mv i c = 500ma, v ce = 10v (*) static forward current transfer ratio h fe 90 165 i c = 1ma, v ce = 5v (*) 100 180 300 i c = 50ma, v ce = 5v (*) 10 20 i c = 500ma, v ce = 10v (*) transition frequency f t 40 mhz i c = 10ma, v ce = 20v f = 20mhz output capacitance c obo 810pf v cb = 20v, f = 1mhz (*) delay time t d 100 ns v cc = 100v. i c = 100ma, i b1 = 10ma, i b2 = 20ma. rise time t r 52 ns storage time t s 3122 ns fall time t f 240 ns
ZXTN08400BFF issue 1 - september 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTN08400BFF issue 1 - september 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23f note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 0.80 1.00 0.0315 0.0394 e 2.30 2.50 0.0906 0.0984 a1 0.00 0.10 0.00 0.0043 e1 1.50 1.70 0.0590 0.0669 b 0.35 0.45 0.0153 0.0161 e2 1.10 1.26 0.0433 0.0496 c 0.10 0.20 0.0043 0.0079 l 0.48 0.68 0.0189 0.0268 d 2.80 3.00 0.1102 0.1181 l1 0.30 0.50 0.0153 0.0161 e 0.95 ref 0.0374 ref r 0.05 0.15 0.0019 0.0059 e1 1.80 2.00 0.0709 0.0787 o 0 12 0 12 d l1 c a1 b r bb e1 e e1 e l a e2
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